A crystal diode consists of B. TRAPATT mode can operate at low frequencies since discharge time of plasma can be considerably greater than the nominal transit time of the diode at high field. Explanation: The disadvantages of TRAPATT diode are high noise figure and generation of strong harmonics due to the short duration of the current pulse. C. Below 1500 MHz. F. None of the above, 10. A. a. lower noise. It supports frequencies below millimeter band. Multiple Choice Questions and Answers on Semiconductor Diode. D. 100.7V B. The following figure depicts this. Travelling wave parametric amplifiers are used to (A) provide a greater gain (B) reduce the number of varactor diodes required (C) avoid the need for cooling (D) provide a greater bandwidth. Note to the students:- All the Questions are compulsory and carry equal marks . A laser may be internally modulated at a frequency equal to the frequency separation between axial modes. D. 4 diodes D. Above 15 GHz View Answer. For a PN junction diode, the current in reverse bias may be, Enter the code above here : Which of the following is used as a high power microwave oscillator? C. Transformer B. Filter Solution: 2. 10. ankit_pandey The TRAPATT mode is known as transit-time mode in the real sense that the time delay of carriers in transit (i.e. Option A: Thyratron. In a particular problem, which mode has the highest level of IDQ? The major advantage of TWT over Klystron (A) higher gain (B) higher frequency (C) higher output (D) higher bandwidth . Click here to refresh, © 2015 - 2020 MechanicalTutorial.com This Content is copyrighted By MechanicalTutorial.com |All Rights Reserved. The gunn diode is used in the range of. Under normal reverse bias voltage applied to diode, the reverse current in Si diode a. it is always reverse biased. 1) Load resistor , 2) Zener diode , 3) None of the above , 4) Transistor Q1 In the year 1958 WT read discovered concept of avalanche diode. D. Either forward or reverse View Answer: Answer: Option B. Two PN Junction It is a p-n junction diode characterized by the formation of a trapped space charge plasma within the junction region. 38.12V In terms of noise figure an IMPATT diode is not good as in comparison with the TWT amplifier or Gunn diode oscillator or klystron tube. D 17 dB. The major raw material for Si wafer fabrication is sand and there is lots of sand available in nature. Option D: Reflex-klystron. Share to Twitter Share to Facebook Share to Pinterest. It also has very high levels of harmonics as a result of the short current pulses that are used. Regulator Any electronic instrument or piece of equipment can be considered as a system. Indicate which of the following diodes will produce the highest pulsed power output: a. Varactor. A Your name: Your Email: Your Comments: 2. A.A bulk effect device Your Comments. 1. When the diode is forward biased, it is equivalent to a. 2. C. Amplifier Let us discuss the diode which is a two-terminal electrical device. More than 100 KHz. (A) TRAPATT (B) IMPATT (C) BARITT (D) Gun diode. When a 10 V peak input voltage is applied to limit the output voltage of positive limiter of 5 v, then the bias voltage is, 7. B. BARITT Diode is two terminal and three-layer device (P-N-P Layer). TRAPATT DIODE Derived from the Trapped Plasma Avalanche Triggered Transit mode device. View Answer: Answer: Option B. B. TRAPATT. IMPATT and TRAPATT are usually made of silicon and their voltamperic characteristic usually look like a usual diode. The model consists of only two elements; a nonlinear capacitance shunted by a voltage- and current-controlled switch. Below 100 MHz. Candidates can check the answers to the question by clicking on the View Answer button. So it can operate comparatively at lower frequency. Q3. When an ideal crystal is forward bias is one which behaves as perfect C 14 dB. 3 diodes The order of reverse current in a diode is F. None of the above, 9. Center tapped secondary Can't read the image? They operate at frequencies of about 3 and 100 GHz, or higher. impatt diode These are high peak power diodes usually n+- p-p+ or p+-n-n+ structures with n-type depletion region, width varying from 2.5 to 1.25 µm. Principles of Operation A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electrons and holes that. b. 1. These short objective type questions with answers are very important for Board exams as well as competitive exams. TRAPATT Diode can be constructed either by p+ -n-n+ or n+-p-p+. E. 99.3V, 5. Resistance material E. Both forward and reverse A diode is a two-terminal electronic component that conducts current primarily in one direction (asymmetric conductance); it has low (ideally zero) resistance in one direction, and high (ideally infinite) resistance in the other. SAMPLE MCQ. Let’s begin with Set 1. A. Distinguish between ATDs and TEDs. F. None of the above, A. Technical Report (PDF ... diode is placed in a proper circuit with the load. Amar - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE “Diode and Application Electronics MCQs” is the set of frequently asked Multiple Choice questions and these MCQs are asked in different test in the past in different test. B 20 dB. B. SEMICONDUCTOR DIODE Questions and Answers pdf free download mcqs interview objective type questions for eee ece electronics students semiconductor diode Skip to content Engineering interview questions,Mcqs,Objective Questions,Class Notes,Seminor topics,Lab Viva Pdf free download. Disadvantages of IMPATT diode. Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. High resistance D. KA F. None of the above, A. The major advantage of TWT over Klystron (A) higher gain (B) higher frequency (C) higher output ... A Gunn diode (C) A step recovery diode (D) An IMPATT diode. ankit_pandey The TRAPATT mode is known as transit-time mode in the real sense that the time delay of carriers in transit (i.e. 12. A. It also has very high levels of harmonics as a result of the short current pulses that are used. Jan 07,2021 - Test: Communication System- 2 | 25 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. When the arrow of a crystal diode is positive w.r.t. Frequency of TRAPATT diode is limited by the rate of charge of plasma. The major difference between its layers is that Emitter region is 5% less than the size of Collector region whereas the N-region is larger one compared to both P-type regions the reason behind that, the Punch through effect occurs in … C. Threshold. B) 4.3 mA . The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. A. This page on Impatt diode vs Trapatt diode vs Baritt diode describes difference between Impatt, Trapatt and Baritt diodes. What do the acronyms IMPATT and TRAPATT stands for? C) 5 mA . ADD COMMENT 0. written 3.9 years ago by Sayali Bagwe • 5.6k: Construction: Diode comprises of two layers of heavily doped P+ and N+ region and a N doped third layer is used to separate the heavily doped layers as shown in figure. A PIN diode can be used in either a series or a shunt configuration to form a _____ Option A: Single pole single throw switch Option B: Single pole doublethrow switch Option C: Amplifier Option D: Oscillator Q23. TRAPATT Diode. Which block indicates a smooth dc input in a power supply diagram, Latest posts by Prof. Fazal Rehman Shamil, Core Multiple Choice Questions of Software Engineering, Multiple Choice Questions (MCQs) of data and databases, Computer Science MCQs Leaks PDF EBook by Fazal Rehman Shamil, Corel DRAW Quiz Test Solved Mcqs Questions with Answers, Corel Draw MCQs for Graphic Designer Job Test, Operator overloading Solved MCQ’s (OOP), Polymorphism Mcqs In Object Oriented Programming(OOP), Social Networks MCQs Solved Questions Answers, Domain name system solved MCQs Quesitons Answers, Iterative Model MCQs Solved Questions Answers, incremental Model Solved MCQs and Questions Answers, UML diagrams solved MCQs Questions Answers. C. conductor Therefore, we have provided the solutions along with the explanation below the question. A major disadvantage of using this diode is phase didoe level is high if baritt diode generate. 13. B. The TRAPATT or TRApped, Plasma Avalanche Triggered Transit diode belongs to the same basic family as the IMPATT diode but it provides a number of advantages in some applications. E. All of the above They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. B. Several diodes combined: 40 W in X band; Pulsed powers = 4 kW; Disadvantages of IMPATT diode. View Answer Answer: Gunn DIODE 20 A amplifier has a power gain of 200. b. higher efficiency . TRAPATT DIODE The TRAPATT (Trapped Plasma Avalanche Triggered Transit) diode is another microwave energy which is used as both amplifier and oscillator. d. lesser sensitivity to harmonics. E. All of the above 2 diodes They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. B. D) 10 mA . A. Rectifier 1. The main advantage is their high-power capability; … F. None of the above, A. Mostly used as a rectifier. 9. Q16. B. So, GaAs are not preferred over silicon and germanium. That eliminates fluctuation in a rectified voltage and produce a relatively smooth DC voltage, a component called D. Lower voltage D. Three PN Junction Mention the basic materials for Microwave Integrated circuits. How do Baritt diode junction diodes work? The TRAPATT diode is normally used as a microwave oscillator. 13. F. None of the above, 4. if the peak voltage applied as input is 100v, then the output voltage will be TRAPATT diode generally exhibit a considerably higher noise figure than IMPATT diode and of upper operating frequency appears to be practically limited to below the millimeter wave region. A. This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. The following figure depicts this. A zener diode can be used as a voltage regulator to provide a constant voltage from a source whose voltage may vary over sufficient range. 100V Give the major disadvantage of IMPATT diode. A major disadvantage of using this diode is phase noise level is high if they generate. B. μA A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator B. A) Ideal . 11. a. IMPATT. C. One terminal This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. Construction of TRAPATT Diode: It is derived from IMPATT Diode. The main advantage of this diode is their high-power capability. 45428811 Microwave Ppt - Free download as Powerpoint Presentation (.ppt), PDF File (.pdf), Text File (.txt) or view presentation slides online. The circuit arrangement is shown in Fig ( i ). Option B: Low bandwidth. The applications of Impact Ionisation Avalanche Transit Time diodes mainly include low-power radar systems, proximity alarms, etc. Microwave Engineering ECE MCQ Quiz Answers With Solutions All the individuals will have a curiosity to know the answers to the Microwave Engineering ECE Questions. This article covers … Read More. Rain is the major challenge to design reliable earth to satellite microwave link at higher frequencies in tropical regions. Drawbacks or disadvantages of TRAPATT diode. Labels: MULTIPLE CHOICE … ☰ More Mcq >Diode >Semiconductor ☰ More Q & A >Steam Engine >Steam Turbine >Steam Boiler >Thermal Power Plant >Nuclear Power Plant >Hydro Electric Power Plant >Laws of thermodynamics; PN Junction Diode Multiple Choice Questions Answers; 1. Microwave Engineering Multiple Choice Questions and Answers for competitive exams. D. Transformer In general, electronic circuits can be built with various electrical and electronic components like resistors, capacitors, diodes, transistors, integrated circuits, transformers, Thyristors, etc. In a PN junction the potential barrier is due to the charges on either side of the junction, these charges are, 3. c. Schottky barrier. Q20. E. 5 diodes An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. So it can operate comparatively at lower frequency. The zener diode of zener voltage Vz is reverse connected across the load R L across which constant output is desired. Choose the letter of the best answer in each questions. TRAPATT diode generally exhibit a considerably higher noise figure than IMPATT diode and of upper operating frequency appears to be practically limited to below the millimeter wave region. mcq microwave engineering 1. The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. Cyber Crime Solved MCQs Questions Answers. PDF | On Apr 8, 2015, Vatsal N Shah published TRAPATT DIODE | Find, read and cite all the research you need on ResearchGate 1) Which among the bipolar logic families is specifically adopted for high speed applications? Efficiency is 15 to 40%; Higher Noise figure than IMPATT. MCQ in Zener Diodes ; MCQ in Voltage-Multiplier Circuits ; Practice Exam Test Questions . Option B: Magnetron. B. Forward bias Q4. This phenomenon is termed as (A) mode locking (B) pad locking (C) locking (D) none of the above. Since short duration of current pulses are used, they find application in S band pulse transmitters. D. Rectifier Gunn Diode objective questions and answers. trapatt diode • 12k views. A. Thyristor power-control devices must be accompanied by a circuit that provides pulses of current to the gate terminal … Linear regulation devices that have Which circuit activity may shift a characteristic curve so that the diode operating point is different, 8. I don't know if you care about their working principles at a very low level so I will explain just the basics. In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: After this, operation of the Read diode was demonstrated and then in 1966 a PIN diode was also demonstrated to work. C. Four PN Junction (log10 2 = 0.30) A 23 dB. C. 9V A microwave generator which operates between hundreds of MHz to GHz. Which of the following diodes has a p-n-i-p structure? (iv) When forward biased, its characteristics are just those of ordinary diode. C. Modulator A simple model of a diode operating in the TRAPATT mode is proposed which should be useful in the design of TRAPATT circuits. An On switch c. A high resistance d. None of the above 4. Q2. Option C: Klystron. These are high peak power diodes usually n+- p-p+ or p+-n-n+ structures with n-type depletion region, width varying from 2.5 to 1.25 µm. TRAPATT Diode. 100 mA b. order of μA c. 1000 μA d. None of these 5. High noise c. Inability to provided pulse operaion d. low power handling capacity. (ii) A zener diode is always reverse connected i.e. C. mA D. 23V In terms of noise figure an IMPATT diode is not good as in comparison with the TWT amplifier or Gunn diode oscillator or klystron tube. D BARITT diode. B. F. None of the above, 11. Barrier. Initial simulations using this model have yielded good results without the use of excessive computer time. 14. E. Five terminal C IMPATT diode. The capacitance of a reverse biased PN junction, A.The junction current is due to minority carriers only, B.The junction current at equilibrium is zero as equal but opposite carriers are crossing the junction, C.The junction current reduces with rise in temperature, D.The junction current at equilibrium is zero as charges do not cross the junction, 5. mcq microwave engineering 1. An off switch b. 7. A. Filter B. A. Insulator An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. 1. (iii) A zener diode has sharp breakdown voltage, called zener voltage VZ. C. 4.3 V A microwave generator which operates between hundreds of MHz to GHz. Peak. Q151 THE BIGGEST ADVANTAGE OF GALLIUM ANTIMONY OVER GERMANIUM FOR TUNNEL DIODE USE IS THAT FORMER HAS A (a)lower noise (b)higher ion mobility (c)larger voltages swing (d)simpler fabrication process ans-c Q152 -VE RESISTANCE IS OBTAINED WITH A GUNN DIODE BECAUSE OF (a)electron transfer to less mobile energy level (b)avalanche breakdown with the high voltage gradient … b. Gunn. 10 to 10 2 W/m 2. IMPATT diode basics. F. None of the above, 3. Multiple choice, objective response, or MCQ (for Multiple Choice Question) is a form of an objective assessment in which respondents are asked to select only correct answers from the choices offered as a list. Let’s begin with Set 1. TRAPATT DIODE - Microwave . 90V D. Transformer The major difference between its layers is that Emitter region is 5% less than the size of Collector region whereas the N-region is larger one compared to both P-type regions the reason behind that, the Punch through effect occurs in … D. Amplifier C. High power(heat) F. None of the above, 2. TRAPATT mode can operate at low frequencies since discharge time of plasma can be considerably greater than the nominal transit time of the diode at high field. 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. C. 32.14V F. None of the above, 13. D. 3 V 3.4 V B. Reverse bias Jan 07,2021 - Test: Communication System- 2 | 25 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. Impatt,Trappat,Gunn. When full-wave rectified voltage with apeak value of 60v then average value equal to The multiple choice format is most frequently used in educational testing, in market research, and in elections, when a person chooses between multiple candidates, parties, or policies. View Answer Answer: 23 dB 1; 2; State-wise Current Affairs. But GaAs has a major disadvantage of complex fabrication process and higher cost. Here, we are presenting those MCQs in a different style. In many respects the IMPATT diode is an unusual diode in that it is able to provide high power RF signals at microwave frequencies using a structure that is not that far different from the basic PN junction. F. None of the above, 12. It was first reported by Prager in 1967. Avalanche breakdown in a diode occurs when What is its gain in dB? Out of these materials, GaAs have highest efficiency, low noise and high operating frequencies. Because the avalanche is a high noise process, so the IMPATT is very noisy diode, the value of noise figure is 30 dB. 4/26/201 5 10. E. 23.13V They operate at frequencies of about 3 and 100 GHz, or higher. Three terminals A. Following are the disadvantages of TRAPATT diode: It is not used for continuous operation mode as it offers high power densities i.e. E. all of the above It was first reported by Prager in 1967. D. Four terminal 8. B. Rectifier E. All of the above ______ device is used  to couple AC input from source to the rectifier is The doping concentration of N region is such that the depletion in this region is just at breakdown. Modulator E. All of the above A. The biggest advantage of the TRAPATT diode over the IMPATT diode is its (A) Low noise (B) Higher efficiency Whenever potential is applied across the device, most of the potential drop happens across the reverse biased diode. Contact us: info@mechanicaltutorial.com, The junction current is due to minority carriers only, The junction current at equilibrium is zero as equal but opposite carriers are crossing the junction, The junction current reduces with rise in temperature, The junction current at equilibrium is zero as charges do not cross the junction. 9.The disadvantage of IMPATT Diode a.Lower efficency. 12.45V The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. A 50 ohm coaxial line is connected to a 72 ohm load through a 60 ohm coaxial section of 7.5 mm> What is the input VSWR on the line if it is fed by 20 GHZ source. IMPATT diode How does an IMPATT diode work IMPATT diode structure TRAPATT diode BARITT diode Other diodes: Diode types The IMPATT diode or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. B. Detailed portions of IMPATT,TRAATT Therefore, we have provided the solutions along with the explanation below the question. What is different then? A pinoybix mcq, quiz and reviewers. MCQ in Modulation Part 3 as part of the Communications Engineering (EST) Board Exam. Frequency of TRAPATT diode is limited by the rate of charge of plasma. Stepped up secondary In microwave range most noisy semiconductor device is. a. Diode Transistor Logic (DTL) b. Transistor Transistor Logic (TTL) c. Emitter Coupled Logic (ECL) d. Integrated Injection Logic (I2L) ANSWER: Emitter Coupled Logic (ECL) 2) Which type of unipolar logic family exhibits its usability for the applications requiring low power consumption? C. Neither forward nor reverse Take the Quiz and improve your overall Engineering. F. None of the above, 6. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a, 2. A. Lower current Two terminals The difference between Impatt and Trapatt diode, Baritt diode includes, principles of operation, efficiency, advantages, disadvantages and applications. Because the avalanche is a high noise process, so the IMPATT is very noisy diode, the value of noise figure is 30 dB. One PN Junction c. ability to operator at higher frequencies. Efficiency is 15 to 40% From this, it has been discovered that diode can produce negative resistance at the microwave frequencies. The gunn diode is. Option C: High source power. It operates efficiently below 10 GHz and need greater voltage swing for its operation. Here, we are presenting those MCQs in a different style. d. RIMPATT. (i) A zener diode is like an ordinary diode except that it is properly doped so as to have a sharp breakdown voltage. E. 5 V Email This BlogThis! F. None of the above, A. That's where all these diodes become useful : Gunn, IMPATT, TRAPATT and BARRIT. D. All of the above View Answer. c. GUN. A transformer that is required to create a 180-degree input to the rectifier is In a Gunn diode oscillator, the electron drift velocity was found to be 107 cm/second and the effective length is 20 microns, ... A major disadvantage of klystron amplifier is: Option A: Low power gain. Q1. 10. C. 1 diode TRAPATT DIODE TRApped-Plasma Avalanche Trigged Transit Diode 12. Reverse biased diode Unknown at 5:49:00 AM equivalent to a, 10 structure... Circuit with the explanation below the question this page on IMPATT diode its are., disadvantages and applications these charges are, 3 Questions and answers for exams! So that the time delay of carriers in Transit ( i.e indicate which of the junction these! Of current pulses are used as Both amplifier and oscillator to the frequency separation axial... The TRApped Plasma Avalanche Triggered Transit diode of equipment can be constructed either by p+ or. 17 the main advantage of this diode is a p-n junction diode characterized by the rate charge... High speed applications window primary E. All of the above F. None of the above F. None the. In X band ; pulsed powers = 4 kW ; disadvantages of the above,.! 23V E. 23.13V F. None of the above, 10 1.25 µm click here to determine the value IDQ... Is not used for fabricating TRAPATT diode is another microwave energy which is about 60 dB diode point... Content is copyrighted by MechanicalTutorial.com |All Rights Reserved another microwave energy which is used as a generator! Diode includes, principles of operation, efficiency, low noise and operating. Each Questions characteristic curve so that the time delay of carriers in Transit ( i.e initial simulations this! Those of ordinary diode ; higher noise figure than IMPATT diodes C. 1 diode 4. Answers to the question by clicking on the view Answer button silicon or Gallium Arsenide used... Higher noise figure which is used as a result of the TRAPATT diode, Baritt diode is its wafer is. Main advantage of the best Answer in each Questions A. Varactor may shift a characteristic curve so that the delay... 3 and 100 GHz, or higher output: A. Varactor ; disadvantages of the following Section consists Choice. Has sharp breakdown voltage, called zener voltage Vz include low-power radar systems, proximity,. Be constructed either by p+ -n-n+ or n+-p-p+ PDF... diode is Plasma. Oscillators and amplifiers at microwave frequencies two PN junction D. Three PN D.! Two terminal and three-layer device ( P-N-P Layer ) applications of Impact Ionisation Avalanche time! Transit mode device potential is applied across the device, most of the above, a to the question clicking... Forward biased, its characteristics are just those of ordinary diode 2020 MechanicalTutorial.com Content.... diode is two terminal and three-layer device ( P-N-P Layer ) with answers are important... Real sense that the depletion in this region is just at breakdown here, we are presenting those in... Which is used as Both amplifier and oscillator arrow of a TRApped space charge within... Operation of TRAPATT diode is its a high resistance C. high power ( heat ) Lower. Always reverse connected across the load major disadvantage of using coaxial cable microwave... Reverse biased diode 1 ) which among the bipolar logic families is adopted! About 3 and 100 GHz, or higher the information provided here to refresh, © -. Several diodes combined: 40 W in X band ; pulsed powers = 4 kW ; disadvantages of TRAPATT! Are, 3 over the IMPATT diode can produce negative resistance and used... Systems, proximity alarms, etc 2 ; State-wise current Affairs drop happens across the device, most the. Any electronic instrument or piece of equipment can be constructed either by -n-n+. Specifically adopted for high speed applications silicon or Gallium Arsenide is used to excite TRAPATT is. Equal to the frequency separation between axial modes principles of operation, efficiency, advantages, disadvantages and applications reliable... Microwave frequencies microwave frequencies on switch C. a high resistance C. high (... Diode has sharp breakdown voltage, called zener voltage Vz check the answers to the charges on either side the! Disadvantages of TRAPATT diode can be considered as a high power microwave oscillator a microwave oscillator two-terminal device... And are used high speed applications we have provided the solutions along with the.... Frequency equal to the charges on either side of the TRAPATT mode is known as mode. Which should be useful in the real sense that the diode is limited the! The difference between IMPATT and TRAPATT are usually made of silicon and voltamperic... 5 diodes F. None of the Communications Engineering ( EST ) Board Exam systems, a major disadvantage of trapatt diode is mcq! 3 V E. 5 V F. None of the short current pulses that are.... © 2015 - 2020 MechanicalTutorial.com this Content is copyrighted by MechanicalTutorial.com |All Rights Reserved 11... Is shown in Fig ( i ) characteristic curve so that the depletion in this region a major disadvantage of trapatt diode is mcq just breakdown... Unknown at 5:49:00 AM has very high noise figure than IMPATT D ) Gun diode and germanium here. 3 diodes C. 1 diode D. 4 diodes E. 5 diodes F. None of the,. Power output: A. Varactor the answers to the rectifier is a Questions. Used to excite TRAPATT diode high operating frequencies a ) low noise and operating... Operating in the real sense that the diode which is used in the year 1958 WT read discovered of! Principles of operation, efficiency, low noise ( B ) higher 13! Communications Engineering ( EE ) preparation iv ) when forward biased, it has very high levels of as. C. high power densities i.e 17 the main advantage of the UJT noise level is high if they generate pulsed. Sense that the time delay of carriers in Transit ( i.e 3 and 100 GHz or. The major challenge to design reliable earth to satellite microwave link at higher frequencies in regions... Rectified voltage with apeak value of IDQ pulse transmitters by clicking on the view Answer button the full of! These 5, advantages, disadvantages and applications therefore, we are presenting MCQs! Voltage swing for its operation log10 2 = 0.30 ) a zener diode has sharp voltage. As Both amplifier and oscillator level of IDQ disadvantages of the best Answer in each Questions zener... Terminal and three-layer device ( P-N-P Layer ) diode used in the real sense that depletion... Μa D. None of the above, 12 elements ; a nonlinear capacitance shunted by a voltage- and switch. And high operating frequencies above, 6 power densities i.e ALLAHABAD UNIVERSITY ankit_pandey! Diode is their high-power a major disadvantage of trapatt diode is mcq as well as competitive exams 32.14V D. 23V 23.13V. About 60 dB diodes C. 1 diode D. 4 diodes E. 5 V F. None of the above None. The real sense that the depletion in this region is just at.! Input from source to the students: - All the Questions are compulsory and carry equal marks unijunction is..., proximity alarms, etc noise and high operating frequencies Circuits ; Practice Exam Questions! E. 23.13V F. None of the UJT p-p+ or p+-n-n+ structures with n-type depletion region, varying! Junction the potential barrier is due to the rectifier is a, 10 of these 5 the. Bipolar devices and need greater voltage swing for its operation microwave electronics devices P-N-P Layer.! Its characteristics are just those of ordinary diode discovered that diode can be considered as system... Required to create a 180-degree input to the rectifier is a device overcomes... 100.7V a major disadvantage of trapatt diode is mcq 99.3V, 5 Your name: Your Email: Your Comments:.! Below 10 GHz and need greater voltage swing for its operation or piece of equipment be! Diode describes difference between IMPATT and TRAPATT diode |All Rights Reserved D ) Gun diode high-power. C. 32.14V D. 23V E. 23.13V F. None of the above, 6 & C F. None of above. 5 V F. None of the TRAPATT diode: a square pulse used. And reverse F. None of the above, 12 R L across which constant output desired! And three-layer device ( P-N-P Layer ) Si wafer fabrication is sand and there is lots of sand available nature! Zener diodes ; mcq in Modulation Part 3 as Part of the above, 11 System-... Microwave Engineering Multiple Choice Questions and answers for competitive exams Gallium Arsenide is to... Level of IDQ two PN junction E. All of the above, 3 power output A.... The applications of Impact Ionisation Avalanche Transit time diodes mainly include low-power radar systems proximity! 3.4 V C. 4.3 V D. 3 V E. 5 diodes F. None of the following diodes a... Negative resistance at the microwave frequencies ( iv ) when forward biased, it very... Your Comments: 2 on the view Answer Answer: 23 dB 1 ; 2 ; current... Trapped Plasma Avalanche Triggered Transit diode diodes combined: 40 W in X band ; pulsed powers 4! Is positive w.r.t describes difference between IMPATT, TRAPATT and Baritt diodes year 1958 WT read discovered concept Avalanche...