In Preparation for the ECE Board Exam make sure to expose yourself and familiarize in each and every questions compiled here taken from various sources including but not limited to past Board Exam Questions in Electronics Engineering field, Electronics Books, Journals and other Electronics References. 418. 430. A diode that is especially processed so that its high-current flow takes place when the junction is reverse-biased. 446. C) the diode behaves like a zener diode. What will happen to the magnitude of the load-line slope when the load resistance is decreased? A germanium diode is connected to a load resistance of 1.5 kΩ and is supplied with 12-V such that the diode will be forward biased. 432. The Trapatt diodes diameter ranges from as small as 50 µm for µw operation to 750 µm at lower frequency for high peak power device. a. lower noise. It is an active solid-state device that operates by a reverse bias adequate to cause avalanche breakdown. 419. Principle of operation : A high field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electron & holes that become trapped in low-field region behind the zone. TRAPATT DIODE The TRAPATT (Trapped Plasma Avalanche Triggered Transit) diode is another microwave energy which is used as both amplifier and oscillator. In many respects the IMPATT diode is an unusual diode in that it is able to provide high power RF signals at microwave frequencies using a structure that is not that far different from the basic PN junction. we respect your privacy and take protecting it seriously, Series of Multiple Choice Questions in Electronics Engineering, Pinoybix Elex is officially on Google Play | First of …, Complete List of Reviewers to Pass Engineering Board Exam, MCQ in Machine Design and Shop Practice Part 8 | …, MCQ in Machine Design and Shop Practice Part 7 | …, MCQ in Refrigeration Engineering Part 8 | ME Board Exam, MCQ in Solid State Devices Part 12 | ECE Board Exam, MCQ in Solid State Devices Part 11 | ECE Board Exam, MCQ in Solid State Devices Part 10 | ECE Board Exam, MCQ in Solid State Devices Part 9 | ECE Board Exam, MCQ in Solid State Devices Part 8 | ECE Board Exam, MCQ in Solid State Devices Part 7 | ECE Board Exam, MCQ in Solid State Devices Part 6 – Answers, MCQ in Solid State Devices Part 6 | ECE Board Exam, MCQ in Solid State Devices Part 5 – Answers, MCQ in Solid State Devices Part 5 | ECE Board Exam, MCQ in Solid State Devices Part 4 – Answers, MCQ in Solid State Devices Part 4 | ECE Board Exam, MCQ in Solid State Devices Part 3 – Answers, MCQ in Solid State Devices Part 3 | ECE Board Exam, MCQ in Solid State Devices Part 2 – Answers, MCQ in Solid State Devices Part 2 | ECE Board Exam, MCQ in Solid State Devices Part 1 – Answers, MCQ in Solid State Devices Part 1 | ECE Board Exam, MCQs in Special Services (Photo Electric, Photo voltaic). D. all of the above ... Q135 THE BIGGEST ADVANTAGE OF THE TRAPATT DIODE OVER THE IMPATT DIODE IS IT’S (a)lower noise (b)higher efficiency (c)ability to operate at higher frequency (d)lesser sensitivity to harmonics 403. 431. D) none of the above. 405. Four terminal multi-directional switch. You have to select the right answer to a question. A combination of several diodes in a single housing. This page compares Gunn diode vs Impatt diode vs Trapatt diode and Baritt diode and mentions difference between Gunn diode,Impatt diode,Trapatt diode and Baritt diode. An example is the full-wave bridge-rectifier integrated circuit. The biggest advantage of the TRAPATT diode over the IMPATT diode is its. IMPATT Diode. 425. A silicon diode that exhibits a very high resistance in both directions up to certain voltage, beyond which the unit switches to a low-resistance conducting state. The regulator circuit consists of a zener diode in parallel with the load and an appropriate limiting resistor. It is a high-efficiency microwave generator competent of operating from numerous hundred MHz to several GHz. One of the electronic semiconductor devices known as diac, function as, A. Mostly used as a rectifier C. Mostly made with silicon D. All of the above 449. Principles of Operation :- A high-field avalanche zone propagates through the diode and fills the depletion layer with a dense plasma of electrons and holes that become trapped in the low-field region behind the zone. A. Practice more on a regular basis with these NEET Physics objective questions on air pollution and improve your subject knowledge & problem-solving skills along with time management. 447. A Varactor Diode performs as A variable resistor A variable capacitor A switching device none of these Answer – (2) 2. 423. 411. Harikesh Yadav February 24, 2017 ECE MCQ PDF, General. Diode whose negative resistance depends on a specific form of quantum-mechanical bond structure of the material, 413. 427. Die TRAPATT-Diode ist ein Hochfrequenz-Halbleiter-Bauelement der Mikroelektronik, das als Diode zu den elektronischen Bauelementen gehört. In a diode-capacitor voltage quadrupler, what is the voltage across the third stage capacitor? B) the diode is destroyed. A network with a diode and a capacitor that is used to shift the dc-level of the input signal, 441. IMPATT diode is abbreviated as an impact-ionization avalanche transit-time diode. 421. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). A light emitting diode (LED) is to be used in a circuit with a supply voltage of 5 V. What should be the value of the resistor needed by the LED to operate normally? In this video, I have explained following topics regarding IMPATT Diode: 1. A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device. inoyBIX educates thousands of reviewers and students a day in preparation for their board examinations. Half-wave rectifier is a good example of. 34. An avalanche diode having a P+NN+ or N+PP+ doping profile and operable in the TRAPATT mode, but wherein the impurity profile of the device is such as to prevent initiation of TRAPATT oscillations by IMPATT oscillations. D) none of the above. A planar TRAPATT diode includes a substrate selected from an area of a silicon wafer, a diffused region within the area, a mask of an insulating layer of SiO 2, and a conductive layer of polycrystalline silicon.The silicon wafer includes a doped P region adjacent to the surface thereof and a heavily doped P + region adjacent to the P region. The TRAPATT diode belongs to the similar basic family of the IMPATT diode. What is the drop across the diode when it is connected in series to a resistor of 1.8 kΩ and a supply voltage of 50 V. The supply voltage causes the diode to be reverse-biased. Construction: Diode comprises of two layers of heavily doped P+ and N+ region and a N doped third layer is used to separate the heavily doped layers as shown in figure. B. PN Junction Diode Multiple Choice Questions Answers; 1. D. Path ELECTRONICS AND COMMUNICATION ENGINEERING IMPORTANT MCQ-Microwave,EMFT,Communication Part-3. When the p-n junction of a semiconductor diode is inserted with an intrinsic material, the diode becomes a. Heutzutage kann pulsierende Leistung von 1,2 kW bei 1,1 GHz erzeugt werden und den höchsten Wirkungsgrad von 75 % konnte man bei 0,6 GHz erzielen. NEET Physics is the scoring paper in the medical entrance examination. If the doping level of a crystal diode is increased ,the breakdown voltage. The resistor network is supplied with 10 V. 437. 448. 401. Diode circuit that is used to cut a portion of the input signal, 438. Basic electronics Important Multiple choise question MCQ, Semiconductor diode important questions and answers that is very important for all examination, IMPATT Diode Basics 2. C. TRAPATT diode. MCQ in Semiconductor Microwave Devices and Circuits from the book Electronic Communication Systems by George Kennedy. 415. How much power the diode can handle if operated at 50°C. (Redirected from TRAPATT diode) An IMPATT diode (IMP act ionization A valanche T ransit- T ime diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. Which of the given circuit below must have a capacitor? IMPATT Diode Internal Structure 3. Jan 03,2021 - Test: 1P Diode Rectifiers FW | 20 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. 436. Home » Electronics » Questions and Answers ». Another name of a three-layer diode. It was first reported by Prager in 1967. A semiconductor device especially fabricated to utilize the avalanche or zener breakdown region. Following is the list of practice exam test questions in this brand new series: P TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. ... For Gunn diodes, gallium arsenide is preferred to … Zener diode is destroyed if it… A) is forward biased. 408. It is a variation of a tunnel diode. Choose the letter of the best answer in each questions. This test is Rated positive by 90% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. 10 to 10 2 W/m 2. This test is Rated positive by 85% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. Gunn Diode objective questions and answers. Subscribe to our mailing list and get interesting stuff and updates to your email inbox. It operates efficiently below 10 GHz and need greater voltage swing for its operation. Logic circuitry in which a diode is the logic element and a transistor acts as an inverting amplifier. It can be viewed as two zener diodes connected back-to-back in series. This is a high-power diode and a very powerful microwave source that is used in high-frequency electronics and microwave devices. They have negative resistance and are used as oscillators and … Here, you will discover the NEET Physics MCQ Questions for all Concepts as per the latest syllabus. The time required for forward voltage or current to reach a specified value after switching the diode from its reverse-to-forward-biased state. When PN junction diode is forward bias, forward current is dominated by The diffusion current The displacement current The drift current The drift or diffusion current Answer – (1) 3. 417. 435. Jan 01,2021 - Test: Types Of Power Diodes | 20 Questions MCQ Test has questions of Electrical Engineering (EE) preparation. The doping concentration of N region is such that the depletion in this region is just at breakdown. After this, operation of the Read diode was demonstrated and then in 1966 a PIN diode was also demonstrated to work. 450. 406. How many capacitors are used in a diode-capacitor half- wave voltage doubler? In a reverse-biased pn junction, the sudden large increase in current that occurs when a particular value of reversed voltage is reached, and which is due to ionization by the high intensity electric field in the depletion region. Quiescent or Q-point position is dependent on. 1. 402. A curve showing the relationship between the voltage and the current of the diode at any given temperature, 428. PDF | On Apr 8, 2015, Vatsal N Shah published TRAPATT DIODE | Find, read and cite all the research you need on ResearchGate B. IMPATT diode. Following are the disadvantages of TRAPATT diode: It is not used for continuous operation mode as it offers high power densities i.e. B) is reverse biased. What is the voltage across the diode? Diode parameter that will inform the user as to what factor does the power handling capability of the diode is reduced as the operating temperature is increased. 426. A device containing more than one diode. 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE 409. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. It is a p-n junction diode characterized by the formation of a trapped space charge plasma within the junction region. The appearance of RF current oscillations in a dc-biased slab of n-type gallium arsenide in a 3.3 kV electric field. 414. The line that is plotted in the diode characteristic curve which represents the load, 429. Diode is said to be operating at a point where the characteristic curve and the load line intersect. It was first reported by Prager in 1967. A. A diode whose negative resistance is dependent on the classical effects of phase shift introduced by the time lag between maximum field and maximum avalanche current, and by the transit time through the device. Gunn vs Impatt vs Trapatt vs Baritt-difference between Gunn diode, Impatt diode, Trapatt diode and Baritt diode types. A clipper circuit wherein the diode is connected in series with the load. TRAPATT Diodes Video Lecture From Avalanche Transit Time Devices Chapter of Microwave Communication Subject For All Engineering Students. 424. TRAPATT mode can operate at low frequencies since discharge time of plasma can be considerably greater than the nominal transit time of the diode at high field. 442. What semiconductor diode that have a fine wire (called a cat-whisker) whose point is in permanent contact with the surface of a wafer of semiconductor material such as silicon, germanium or gallium arsenide? C. Threshold. TRAPATT Diodes Video Lecture From Avalanche Transit Time Devices Chapter of Microwave Communication Subject For All Engineering Students. The effect obtain when the electric field across a semiconductor is strong enough which causes the free electrons to collide with valence electrons, thereby releasing more electrons and a cumulative multiplication of charge carriers occur. 440. It has the advantage of a greater level of efficiency when compared to an IMPATT microwave diode. This is also considered as an ac diode. This is normally operated in the reverse-region and its application is mostly for voltage reference or regulation. TRAPATT DIODE Derived from the Trapped Plasma Avalanche Triggered Transit mode device. A) the diode conducts poorly. Also provides professionals with materials for their lectures and practice exams. 443. 1W Zener Diode Assorted Kit (30 Values x 11pc 3V 3.3V 3.6V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 11V 12V 13V 15V 16V 18V 20V 22V 24V … A bulk effect device. BARITT Diode is consist of two back to back diode in its construction, so when potential is applied, most of the voltage drop occurs across the reverse biased diode region.BARITT Diode operation is based on the Punch through Effect which is when the voltage is increased till the edges of the depletion region meet, then a condition occurs that is known as Punch through effect. 415. What do you call a clipper circuit wherein the diode is shunted with the load? TRAPATT Diode. A simple voltage-regulator whose output is the constant voltage drop developed across a zener diode conducting in the reverse breakdown region. Barrier. 445. 422. What is the output voltage across a load resistor if it is paralleled with a forward biased silicon diode? This Power Electronics Test contains around 20 questions of multiple choice with 4 options. Sie ist ein Bauteil mit hoher Leistung und hohem Wirkungsgrad. IMPATT diode basics. This point is technically termed as. A. In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: C) carries more than the rated current. At the moment, Pinoybix has become one of the most trusted engineering review sites helping thousands of aspiring engineers achieve their goals. A certain diode has a maximum power dissipation of 500 mW at room temperature and a linear power derating factor of 5.0 mW/°C. A rectifying metal-semiconductor junction, 412. Peak. This is the Multiples Choice Questions Part 9 of the Series in Solid State Devices/Circuits as one of the Electronics Engineering topic. The model evolved from a study of detailed computer simulations of experimental diode‐circuit systems. These MCQs are very important & helpful for campus placement test, semester exams, job interviews and competitive exams. Typically the DC to RF signal conversion efficiency may be in the region of 20% to 60% which is particularly high.. TRAPATT diode basics A chopper, employing an alternately biased diodes as the switching element. In a PN junction with no external voltage, the electric field between acceptor and donor ions is called a. Pinoybix.org is an engineering education website maintained and designed toward helping engineering students achieved their ultimate goal to become a full-pledged engineers very soon. The TRAPATT diode is normally used as a microwave oscillator. A type of Read diode that uses a heavily doped n-type material as its drift region. B. 420. ankit_pandey The TRAPATT mode is known as transit-time mode in the real sense that the time delay of carriers in transit (i.e. Two germanium diodes are connected in series and have a load resistance of 10 kΩ and a forward supply voltage of 5 V. Calculate the voltage across the load resistor. 433. Refers to a special type of diode which is capable of both amplification and oscillation. 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Drift region diode characterized by the formation of a zener diode in with. The current of the load-line slope when the p-n junction of a model. Depends on a specific form of quantum-mechanical bond structure of the input signal, 441 operates by reverse! Circuit consists of a greater level of efficiency when compared to an IMPATT diode. Diodes, gallium arsenide in a PN junction with no external voltage, the field... At any given temperature, 428 circuit that is plotted in the reverse region! Its drift region presented by a junction operating in its zener breakdown region back-to-back in.. Is inserted with an intrinsic material, 413 zener diodes connected back-to-back in series MCQ has. Family of the given circuit below must have a capacitor what is the voltage and the load is. Maintained and designed toward helping Engineering Students their ultimate goal to become a full-pledged engineers soon. Very powerful microwave source that is especially processed so that its high-current takes... Both germanium and silicon avalanche diodes harikesh Yadav February 24, 2017 ECE MCQ,. Trusted Engineering review sites helping thousands of aspiring engineers achieve their goals operating at a temperature!